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GaN基发光二极管外延中p型AlGaN电子阻挡层的优化生长
王兵; 李志聪; 姚然; 梁萌; 闫发旺; 王国宏
2011
Source Publication物理学报
Volume60Issue:1Pages:016108-1-016108-6
Abstract本文利用金属有机物化学气相沉积(MOCVD)方法系统地研究了p-AlGaN层掺杂机理及优化设计生长.明确了生长温度,压力及TMAl的流量对AlGaN层Al组分的影响关系,并给出了各自不同的机理与作用.研究发现, Al组分介于10%—30%之间能够很好地将电子限定在量子阱区域并保持高的材料晶体质量.发展了一种新的生长技术来克服p-AlGaN层掺入效率低下和空穴注入不足的问题.优化条件下生长的p型AlGaN电子阻挡层很大地提升了InGaN/GaN基LED的输出光功率
metadata_83中科院半导体照明研发中心
Subject Area半导体材料
Funding Organization国家高技术研究发展计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:4120316
Date Available2011-08-16
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21656
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
王兵,李志聪,姚然,等. GaN基发光二极管外延中p型AlGaN电子阻挡层的优化生长[J]. 物理学报,2011,60(1):016108-1-016108-6.
APA 王兵,李志聪,姚然,梁萌,闫发旺,&王国宏.(2011).GaN基发光二极管外延中p型AlGaN电子阻挡层的优化生长.物理学报,60(1),016108-1-016108-6.
MLA 王兵,et al."GaN基发光二极管外延中p型AlGaN电子阻挡层的优化生长".物理学报 60.1(2011):016108-1-016108-6.
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