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非晶硅太阳能电池背反ZnO:Al薄膜制备
肖海波; 曾湘波; 刘石勇; 彭文博; 石明吉; 张长沙
2010
Source Publication硅酸盐学报
Volume38Issue:1Pages:46-49
Abstract以ZnO:Al(2%Al_2O_3,质量分数)为靶材,用射频磁控溅射在玻璃衬底上制备ZnO:Al薄膜,分析了各沉积参数对薄膜光电性能的影响.结果表明:溅射功率对ZnO:Al的透过率影响最大,其次是反应腔室压力,而衬底温度对透过率几乎没有影响.ZnO:Al的电阻率主要取决于衬底温度和溅射功率.综合考虑透过率和电阻率,确定了背反ZnO:Al的最佳沉积参数(衬底温度为200℃,溅射功率为200W,反虑腔室压力为0.6Pa),得到了透过率大于85%,电阻率最小为7.6×10~(-4)Ω·cm的ZnO:Al薄膜.制备了ZnO:Al/Ag/ss(stainless steel)背反电极,并将其用于非晶硅太阳能电池.与无背反的不锈钢衬底上的电池相比,非晶硅太阳能电池短路电流密度增加了16%.
metadata_83中科院半导体材料科学重点实验室
Subject Area半导体材料
Funding Organization国家973计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:3804368
Date Available2011-08-16
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21642
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
肖海波,曾湘波,刘石勇,等. 非晶硅太阳能电池背反ZnO:Al薄膜制备[J]. 硅酸盐学报,2010,38(1):46-49.
APA 肖海波,曾湘波,刘石勇,彭文博,石明吉,&张长沙.(2010).非晶硅太阳能电池背反ZnO:Al薄膜制备.硅酸盐学报,38(1),46-49.
MLA 肖海波,et al."非晶硅太阳能电池背反ZnO:Al薄膜制备".硅酸盐学报 38.1(2010):46-49.
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