SEMI OpenIR  > 中科院半导体材料科学重点实验室
超辐射发光二极管的应用
王佐才; 吕雪芹; 金鹏; 王占国
2010
Source Publication红外技术
Volume32Issue:5Pages:297-303
Abstract超辐射发光二极管(superluminescent diode简称SLD)具有光谱宽、功率大等优点. 作为一种特殊光源, SLD已经被广泛应用. 简要介绍了SLD的主要特征、主要表征参数和发展现状, 详细阐述了SLD在干涉式光纤陀螺仪、光学相干断层成像技术、波分复用技术、光时域反射仪、可调谐外腔激光器、光纤传感器和光纤测试等领域中的应用
metadata_83中科院半导体材料科学重点实验室
Subject Area半导体材料
Funding Organization国家重点基础研究发展计划,国家自然科学基金项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:3930946
Date Available2011-08-16
Citation statistics
Cited Times:5[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21628
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
王佐才,吕雪芹,金鹏,等. 超辐射发光二极管的应用[J]. 红外技术,2010,32(5):297-303.
APA 王佐才,吕雪芹,金鹏,&王占国.(2010).超辐射发光二极管的应用.红外技术,32(5),297-303.
MLA 王佐才,et al."超辐射发光二极管的应用".红外技术 32.5(2010):297-303.
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