SEMI OpenIR  > 中科院半导体材料科学重点实验室
Residual impurities and electrical properties of undoped LEC InAs single crystals
Hu Weijie; Zhao Youwen; Sun Wenrong; Duan Manlong; Dong Zhiyuan; Yang Jun
2010
Source Publication半导体学报
Volume31Issue:4Pages:042001-1-042001-4
AbstractImpurities and their influence on the properties of InAs single crystals have been studied by combining the results of glow discharge mass spectrometry (GDMS), Hall measurements, Raman scattering and infrared absorption. The results indicate that carbon is a major impurity in LEC-InAs single crystals and exhibits a significant influence on the electrical and optical properties.
metadata_83中科院半导体材料科学重点实验室
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:3894506
Date Available2011-08-16
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21624
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Hu Weijie,Zhao Youwen,Sun Wenrong,et al. Residual impurities and electrical properties of undoped LEC InAs single crystals[J]. 半导体学报,2010,31(4):042001-1-042001-4.
APA Hu Weijie,Zhao Youwen,Sun Wenrong,Duan Manlong,Dong Zhiyuan,&Yang Jun.(2010).Residual impurities and electrical properties of undoped LEC InAs single crystals.半导体学报,31(4),042001-1-042001-4.
MLA Hu Weijie,et al."Residual impurities and electrical properties of undoped LEC InAs single crystals".半导体学报 31.4(2010):042001-1-042001-4.
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