SEMI OpenIR  > 中科院半导体材料科学重点实验室
Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals
Peng Yinsheng; Ye Xiaoling; Xu Bo; Jin Peng; Niu Jiebin; Jia Rui; Wang Zhanguo
2010
Source PublicationJournal of Semiconductors
Volume31Issue:1Pages:012003-1-012003-5
AbstractThis paper mainly describes fabrication of two-dimensional GaAs-based photonic crystals with low nanometer scale air-hole arrays using an inductively coupled plasma (ICP) etching system. The sidewall profile and surface characteristics of the photonic crystals are systematically investigated as a function of process parameters including ICP power, RF power and pressure. Various ICP powers have no significant effect on the verticality of air-hole sidewall and surface smoothness. In contrast, RF power and chamber pressure play a remarkable role in improving sidewall verticality and surface characteristics of photonic crystals indicating different etching mechanisms for low nanometer scale photonic crystals. The desired photonic crystals have been achieved with hole diameters as low as 130 nm with smooth and vertical profiles by developing a suitable ICP processes. The influence of the ICP parameters on this device system are analyzed mainly by scanning electron microscopy. This fabrication approach is not limited to GaAs material, and may be efficiently applied to the development of most two-dimensional photonic crystal slabs.
metadata_83中科院半导体材料科学重点实验室
Subject Area半导体材料
Funding Organizationthe National Natural Science Foundation of China,the State Key Development Program for Basic Research of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:3803013
Date Available2011-08-16
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21620
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Peng Yinsheng,Ye Xiaoling,Xu Bo,et al. Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals[J]. Journal of Semiconductors,2010,31(1):012003-1-012003-5.
APA Peng Yinsheng.,Ye Xiaoling.,Xu Bo.,Jin Peng.,Niu Jiebin.,...&Wang Zhanguo.(2010).Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals.Journal of Semiconductors,31(1),012003-1-012003-5.
MLA Peng Yinsheng,et al."Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals".Journal of Semiconductors 31.1(2010):012003-1-012003-5.
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感应耦合等离子刻蚀二维低纳米级GaAs基(351KB) 限制开放--Application Full Text
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