SEMI OpenIR  > 中科院半导体材料科学重点实验室
MOCVD生长温度对氧化锌薄膜结构及发光性能的影响
王振华; 杨安丽; 刘祥林; 魏鸿源; 焦春美; 朱勤生; 杨少延; 王占国
2010
Source Publication人工晶体学报
Volume39Issue:1Pages:34-38,43
Abstract利用甲醇做氧源,采用金属有机物化学气相沉积(MOCVD)工艺在硅(111)衬底上生长了一系列的氧化锌薄膜,生长温度为400~600 ℃.薄膜的表面形貌及晶体质量分别利用场发射扫描电镜及X射线衍射仪进行了测量.研究表明:随着生长温度的降低,在X射线衍射图谱中氧化锌(101)峰取代了(002)峰成为了主峰.这可能是由于温度过低使得甲醇未完全分解,而甲醇分子抑制了氧化锌沿c轴极性过快的生长所致.室温光致发光光谱结果表明在较高生长温度下获得的样品具有良好的光学性质,发光强度随着温度的降低而降低.
metadata_83中科院半导体材料科学重点实验室
Subject Area半导体材料
Funding Organizationthe 863 High Technology R & D Program of China,the Special Funds for Major State Basic Research Project (973) of China,the National Natural Science Foundation of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:3834879
Date Available2011-08-16
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21618
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
王振华,杨安丽,刘祥林,等. MOCVD生长温度对氧化锌薄膜结构及发光性能的影响[J]. 人工晶体学报,2010,39(1):34-38,43.
APA 王振华.,杨安丽.,刘祥林.,魏鸿源.,焦春美.,...&王占国.(2010).MOCVD生长温度对氧化锌薄膜结构及发光性能的影响.人工晶体学报,39(1),34-38,43.
MLA 王振华,et al."MOCVD生长温度对氧化锌薄膜结构及发光性能的影响".人工晶体学报 39.1(2010):34-38,43.
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