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条形叉指n阱和p衬底结的硅LED设计及分析
杨广华; 毛陆虹; 黄春红; 王伟; 郭维廉
2010
Source Publication发光学报
Volume31Issue:3Pages:369-372
Abstract采用0.35μm双栅标准CMOS工艺最新设计和制备了叉指型Si LED发光器件。器件结构采用n阱和p衬底结,n阱为叉指结构,嵌入到p衬底中而结合成Si pn结LED。观察了Si LED发光显微图形及实际器件的版图,并在对器件进行了正、反向I-V特性测试、光功率及光谱特性的测量。Si LED的正向偏置时开启电压为0.9 V,反向偏置时在15 V左右可观察到发光。器件在室温下反向偏置时,10 V,100 mA电流下所得输出光功率为12.6 nW,发光峰值在758 nm处。
metadata_83集成光电子学国家重点实验室
Subject Area光电子学
Funding Organization国家自然科学基金,天津市基础研究重点项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:3901065
Date Available2011-08-16
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21596
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
杨广华,毛陆虹,黄春红,等. 条形叉指n阱和p衬底结的硅LED设计及分析[J]. 发光学报,2010,31(3):369-372.
APA 杨广华,毛陆虹,黄春红,王伟,&郭维廉.(2010).条形叉指n阱和p衬底结的硅LED设计及分析.发光学报,31(3),369-372.
MLA 杨广华,et al."条形叉指n阱和p衬底结的硅LED设计及分析".发光学报 31.3(2010):369-372.
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