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红光GaInP/AlGaInP正方形微腔激光器
李敬; 黄永箴; 肖金龙; 杜云; 樊中朝
2009
Source Publication光电子·激光
Volume20Issue:10Pages:1278-1281
Abstract利用普通光刻和感应耦合等离子体(ICP)刻蚀技术制作了红光GaInP/AlGaInP正方形微腔激光器,光功率电流曲线表明,器件实现了 200K 的低温激射.对边长为10μm、输出波导长为30μm的正方形微腔激光器,室温测量得到的纵模模式间距为1.3 nm,所对应的是由输出波导和正方形腔组成的F-P腔的F-P模式.采用二维时域有限差分法(FDTD),模拟研究了侧壁粗糙对正方形腔模式品质因子的影响.
metadata_83集成光电子学国家重点实验室
Subject Area光电子学
Funding Organization国家自然科学基金资助项目,国家重点基础研究计划资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:3879643
Date Available2011-08-16
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21562
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
李敬,黄永箴,肖金龙,等. 红光GaInP/AlGaInP正方形微腔激光器[J]. 光电子·激光,2009,20(10):1278-1281.
APA 李敬,黄永箴,肖金龙,杜云,&樊中朝.(2009).红光GaInP/AlGaInP正方形微腔激光器.光电子·激光,20(10),1278-1281.
MLA 李敬,et al."红光GaInP/AlGaInP正方形微腔激光器".光电子·激光 20.10(2009):1278-1281.
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