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硅纳米槽微环谐振器温度特性研究
宋世娇; 安俊明; 赵雷; 吴远大; 胡雄伟
2010
Source Publication激光与光电子学进展
Volume47Issue:12Pages:75-79
Abstract理论上模拟分析了硅基绝缘(SOI)槽波导微环谐振腔加盖SiO2包覆层情况下的温度稳定特性.对比了槽微环和纳米线微环,以及不同结构的槽微环谐振腔的温度稳定性.得到在室温下,5μm半径槽微环在1.55μm附近的谐振波长随温度变化为0.049nm/℃,而相同温度,半径以及折射率情况下纳米线微环谐振波长随温度变化为0.092nm/℃,是槽微环的1.88倍.而且改变槽微环的槽宽和两侧Si条的宽度也会对微环的温度特性有影响,增加槽宽或者减小Si条宽度都会使谐振波长随温度的变化进一步减小.通过采用负温度系数聚合物材料WIR30-490和优化槽波导的结构参数,使得温度对微环谐振波长的影响降低到0.0023nm/℃
metadata_83集成光电子学国家重点实验室
Subject Area光电子学
Funding Organization国家自然科学基金,国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:4085488
Date Available2011-08-16
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21558
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
宋世娇,安俊明,赵雷,等. 硅纳米槽微环谐振器温度特性研究[J]. 激光与光电子学进展,2010,47(12):75-79.
APA 宋世娇,安俊明,赵雷,吴远大,&胡雄伟.(2010).硅纳米槽微环谐振器温度特性研究.激光与光电子学进展,47(12),75-79.
MLA 宋世娇,et al."硅纳米槽微环谐振器温度特性研究".激光与光电子学进展 47.12(2010):75-79.
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