SEMI OpenIR  > 集成光电子学国家重点实验室
SOI亚微米波导光栅的设计与制作
孙阳; 徐学俊; 屠晓光; 陈少武
2010
Source Publication半导体光电
Volume31Issue:1Pages:27-29
Abstract报道了SOI基亚微米小尺寸波导光栅器件的设计、制作与测试结果.提出了波导与光栅同步制作的方案,避免了套刻,节约了成本.实验中采用电子束光刻(EBL)、感应耦合等离子体(ICP)刻蚀等先进半导体工艺技术,结合图形补偿等技术手段,完成了亚微米波导光栅的制作.光栅周期为350 nm,占空比16:19.采用该光栅做反射镜,制作了法布里-珀罗(F-P)谐振腔,经测试得到了与模拟相吻合的结果,峰谷比达到11 dB.
metadata_83集成光电子学国家重点实验室
Subject Area光电子学
Funding Organization国家自然科学基金,国家"973"计划课题
Indexed ByCSCD
Language中文
CSCD IDCSCD:3859550
Date Available2011-08-16
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21526
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
孙阳,徐学俊,屠晓光,等. SOI亚微米波导光栅的设计与制作[J]. 半导体光电,2010,31(1):27-29.
APA 孙阳,徐学俊,屠晓光,&陈少武.(2010).SOI亚微米波导光栅的设计与制作.半导体光电,31(1),27-29.
MLA 孙阳,et al."SOI亚微米波导光栅的设计与制作".半导体光电 31.1(2010):27-29.
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