SEMI OpenIR  > 集成光电子学国家重点实验室
Si纳米线阵列波导光栅制备
张家顺; 安俊明; 赵雷; 宋世娇; 吴远大; 胡雄伟
2010
Source Publication光电子·激光
Volume21Issue:10Pages:1431-1434
Abstract采用绝缘层上Si(SOI)材料设计制备了3×5纳米线阵列波导光栅(AWG),器件大小为110μm×100μm.利用简单传输法模拟了器件的传输谱,并采用二维时域有限差分(FDTD)模拟中心通道输出光场的稳态分布,模拟结果表明,器件的通道间隔为11 nm,通道间的串扰为18 dB.通过电子束曝光(EBL)和感应耦合等离子(ICP)刻蚀制备了所设计的器件,光输出谱测试分析表明,器件中心通道的片上损耗为9 dB,通道间隔为8.36~10.40 nm,中心输出通道的串扰为6 dB.在误差允许范围内,设计和测试的结果一致
metadata_83集成光电子学国家重点实验室
Subject Area光电子学
Funding Organization科技部"863"计划资助项目,国家自然科学基金资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:4050466
Date Available2011-08-16
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21520
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
张家顺,安俊明,赵雷,等. Si纳米线阵列波导光栅制备[J]. 光电子·激光,2010,21(10):1431-1434.
APA 张家顺,安俊明,赵雷,宋世娇,吴远大,&胡雄伟.(2010).Si纳米线阵列波导光栅制备.光电子·激光,21(10),1431-1434.
MLA 张家顺,et al."Si纳米线阵列波导光栅制备".光电子·激光 21.10(2010):1431-1434.
Files in This Item:
File Name/Size DocType Version Access License
Si纳米线阵列波导光栅制备.pdf(612KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[张家顺]'s Articles
[安俊明]'s Articles
[赵雷]'s Articles
Baidu academic
Similar articles in Baidu academic
[张家顺]'s Articles
[安俊明]'s Articles
[赵雷]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[张家顺]'s Articles
[安俊明]'s Articles
[赵雷]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.