High contrast ratio, high uniformity multiple quantum well spatial light modulators | |
Huang Yuyang; Liu H C; Wasilewski Z R; Buchanan M; Laframboise S R; Yang Chen; Cui Guoxin; Bian Lifeng; Yang Hui; Zhang Yaohui | |
2010 | |
Source Publication | Journal of Semiconductors
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Volume | 31Issue:3Pages:62-65 |
Abstract | Our latest research results on GaAs-AlGaAs multiple quantum well spatial light modulators are presented.The thickness uniformity of the epitaxial layers across the 3-inch wafer grown by our molecular beam epitaxy is better than 0.1% and the variation of cavity resonance wavelength within the wafer is only 0.9 nm. A contrast ratio (CR) of 102 by varying bias voltage from 0 to 6.7 V is achieved after fine tuning the cavity by etching an adjust layer. Both theoretical and experimental results demonstrate that incorporating an adjust layer is an effective tuning method for obtaining high CR. |
metadata_83 | 集成光电子学国家重点实验室 |
Subject Area | 光电子学 |
Funding Organization | the Suzhou International Cooperation Fund, China,the President Fund of CAS,the International Collaboration Plan for Science and Technology of the Chinese Ministry of Science and Technology |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:3873596 |
Date Available | 2011-08-16 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/21510 |
Collection | 集成光电子学国家重点实验室 |
Recommended Citation GB/T 7714 | Huang Yuyang,Liu H C,Wasilewski Z R,et al. High contrast ratio, high uniformity multiple quantum well spatial light modulators[J]. Journal of Semiconductors,2010,31(3):62-65. |
APA | Huang Yuyang.,Liu H C.,Wasilewski Z R.,Buchanan M.,Laframboise S R.,...&Zhang Yaohui.(2010).High contrast ratio, high uniformity multiple quantum well spatial light modulators.Journal of Semiconductors,31(3),62-65. |
MLA | Huang Yuyang,et al."High contrast ratio, high uniformity multiple quantum well spatial light modulators".Journal of Semiconductors 31.3(2010):62-65. |
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