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8通道-1.6nm Si纳米线阵列波导光栅的设计与制作
赵雷; 安俊明; 张家顺; 宋世娇; 吴远大; 胡雄伟
2010
Source Publication光电子·激光
Volume21Issue:11Pages:1589-1592
Abstract设计了基于绝缘层上硅(SOI)材料的8通道Si纳米线阵列波导光栅(AWG),器件的通道间隔为1.6nm,面积为420μm×130μm.利用传输函数法模拟了器件传输谱,结果表明,器件的通道间隔为1.6nm,通道间串扰为17dB.给出了结合电子束光刻(EBL)和感应耦合等离子(ICP)刻蚀技术制备器件的详细流程.光谱测试结果分析表明,器件通道间隔为1.3~1.6nm,通道串扰为3dB,中心通道损耗为11.6dB
metadata_83集成光电子学国家重点实验室
Subject Area光电子学
Funding Organization国家自然科学基金资助项目,科技部"863"计划资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:4050504
Date Available2011-08-16
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21506
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
赵雷,安俊明,张家顺,等. 8通道-1.6nm Si纳米线阵列波导光栅的设计与制作[J]. 光电子·激光,2010,21(11):1589-1592.
APA 赵雷,安俊明,张家顺,宋世娇,吴远大,&胡雄伟.(2010).8通道-1.6nm Si纳米线阵列波导光栅的设计与制作.光电子·激光,21(11),1589-1592.
MLA 赵雷,et al."8通道-1.6nm Si纳米线阵列波导光栅的设计与制作".光电子·激光 21.11(2010):1589-1592.
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