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A 2.4 GHz power amplifier in 0.35 μm SiGe BiCMOS
Hao Mingli; Shi Yin
2010
Source PublicationJournal of Semiconductors
Volume31Issue:1Pages:65-68
metadata_83高性能集成电路实验室
Subject Area微电子学
Indexed ByCSCD
CSCD IDCSCD:3803025
Date Available2011-08-04
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Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21490
Collection高性能集成电路实验室
Recommended Citation
GB/T 7714
Hao Mingli,Shi Yin. A 2.4 GHz power amplifier in 0.35 μm SiGe BiCMOS[J]. Journal of Semiconductors,2010,31(1):65-68.
APA Hao Mingli,&Shi Yin.(2010).A 2.4 GHz power amplifier in 0.35 μm SiGe BiCMOS.Journal of Semiconductors,31(1),65-68.
MLA Hao Mingli,et al."A 2.4 GHz power amplifier in 0.35 μm SiGe BiCMOS".Journal of Semiconductors 31.1(2010):65-68.
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