SEMI OpenIR  > 半导体超晶格国家重点实验室
高迁移率GaAs/Al_(0.35)Ga_(0.65)As二维电子气的微波回旋共振研究
杨威; 罗海辉; 钱轩; 姬扬
2010
Source Publication红外与毫米波学报
Volume29Issue:2Pages:87-90,122
Contribution Rank国家自然科学基金,国家重点基础研究发展规划(973)项目
metadata_83半导体超晶格国家重点实验室
Subject Area半导体物理
Indexed ByCSCD
CSCD IDCSCD:3856578
Date Available2011-08-04
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21462
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
杨威,罗海辉,钱轩,等. 高迁移率GaAs/Al_(0.35)Ga_(0.65)As二维电子气的微波回旋共振研究[J]. 红外与毫米波学报,2010,29(2):87-90,122.
APA 杨威,罗海辉,钱轩,&姬扬.(2010).高迁移率GaAs/Al_(0.35)Ga_(0.65)As二维电子气的微波回旋共振研究.红外与毫米波学报,29(2),87-90,122.
MLA 杨威,et al."高迁移率GaAs/Al_(0.35)Ga_(0.65)As二维电子气的微波回旋共振研究".红外与毫米波学报 29.2(2010):87-90,122.
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