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MBE方法在GaAs(001)衬底上外延生长GaSb膜
郝瑞亭; 申兰先; 邓书康; 杨培志; 涂洁磊; 廖华; 徐应强; 牛智川
2010
Source Publication功能材料
Volume41Issue:4Pages:734-736
Contribution Rank国家自然科学基金资助项目,国家重点基础研究发展计划(973计划)资助项目,云南省社会发展科技计划资助项目
metadata_83半导体超晶格国家重点实验室
Subject Area半导体材料
Indexed ByCSCD
CSCD IDCSCD:3870327
Date Available2011-08-04
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21456
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
郝瑞亭,申兰先,邓书康,等. MBE方法在GaAs(001)衬底上外延生长GaSb膜[J]. 功能材料,2010,41(4):734-736.
APA 郝瑞亭.,申兰先.,邓书康.,杨培志.,涂洁磊.,...&牛智川.(2010).MBE方法在GaAs(001)衬底上外延生长GaSb膜.功能材料,41(4),734-736.
MLA 郝瑞亭,et al."MBE方法在GaAs(001)衬底上外延生长GaSb膜".功能材料 41.4(2010):734-736.
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