| Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation | |
| 阎Zhou HY (Zhou Huiying); Qu SC (Qu Shengchun); Jin P (Jin Peng); Xu B (Xu Bo); Ye XL (Ye Xiaoling); Liu JP (Liu Junpeng); Wang ZG (Wang Zhanguo) | |
| 2011 | |
| Conference Name | 16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14) |
| Source Publication | JOURNAL OF CRYSTAL GROWTH, 318 (1): 572-575 |
| Conference Date | AUG 08-13, 2010 |
| Conference Place | Beijing, PEOPLES R CHINA |
| Subject Area | 半导体材料 |
| Indexed By | CPCI（ISTP） |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/21435 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | 阎Zhou HY ,Qu SC ,Jin P ,et al. Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation[C],2011. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Study of molecular-b（584KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment