SEMI OpenIR  > 中科院半导体材料科学重点实验室
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
阎Zhou HY (Zhou Huiying); Qu SC (Qu Shengchun); Jin P (Jin Peng); Xu B (Xu Bo); Ye XL (Ye Xiaoling); Liu JP (Liu Junpeng); Wang ZG (Wang Zhanguo)
2011
Conference Name16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14)
Source PublicationJOURNAL OF CRYSTAL GROWTH, 318 (1): 572-575
Conference DateAUG 08-13, 2010
Conference PlaceBeijing, PEOPLES R CHINA
Subject Area半导体材料
Indexed ByCPCI(ISTP)
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21435
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
阎Zhou HY ,Qu SC ,Jin P ,et al. Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation[C],2011.
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