Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation | |
阎Zhou HY (Zhou Huiying); Qu SC (Qu Shengchun); Jin P (Jin Peng); Xu B (Xu Bo); Ye XL (Ye Xiaoling); Liu JP (Liu Junpeng); Wang ZG (Wang Zhanguo) | |
2011 | |
Conference Name | 16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14) |
Source Publication | JOURNAL OF CRYSTAL GROWTH, 318 (1): 572-575 |
Conference Date | AUG 08-13, 2010 |
Conference Place | Beijing, PEOPLES R CHINA |
Subject Area | 半导体材料 |
Indexed By | CPCI(ISTP) |
Language | 英语 |
Document Type | 会议论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/21435 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | 阎Zhou HY ,Qu SC ,Jin P ,et al. Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation[C],2011. |
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Study of molecular-b(584KB) | 限制开放 | License | Application Full Text |
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