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An investigation on InxGa1-xN/GaN multiple quantum well solar cells
Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Hou QF; Lin DF; Li JM; Wang ZG; Hou X
2011
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume44Issue:26Pages:Art. No. 265103
AbstractThe conversion efficiency of InxGa1-xN/GaN multiple quantum well solar cells is originally investigated in theory based on the ideal diode model and the ideal unity quantum well model. The results reveal that the conversion efficiency partially depends on the width of the quantum well and the thickness of the barrier region but is dominated by the number of quantum wells and indium content of InxGa1-xN. The calculated results are found to be basically trustworthy by comparing with reported experimental results. An In0.15Ga0.85N/GaN multiple quantum well solar cell is successfully fabricated with a conversion efficiency of 0.2%. The main discrepancy between calculated and experimental results is the material quality and manufacturing technology which need to be improved.
KeywordFundamental-band Gap Phase-separation Efficiency Inn Emission Layers Model
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2011-07-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21402
Collection半导体材料科学中心
Recommended Citation
GB/T 7714
Deng QW,Wang XL,Xiao HL,et al. An investigation on InxGa1-xN/GaN multiple quantum well solar cells[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(26):Art. No. 265103.
APA Deng QW.,Wang XL.,Xiao HL.,Wang CM.,Yin HB.,...&Hou X.(2011).An investigation on InxGa1-xN/GaN multiple quantum well solar cells.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(26),Art. No. 265103.
MLA Deng QW,et al."An investigation on InxGa1-xN/GaN multiple quantum well solar cells".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.26(2011):Art. No. 265103.
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