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First principles study of p-type doping in SiC nanowires: role of quantum effect
Wang ZG; Xue SW; Li JB; Gao F
2011
Source PublicationJOURNAL OF NANOPARTICLE RESEARCH
Volume13Issue:7Pages:2887-2892
AbstractUsing first principles density functional theory calculations, we investigated the X and X-N-X (X = Al and Ga) doped 3C-SiC nanowires grown along the [111] crystal direction with diameter of 1.00 and 1.33 nm. We found that the ionization energy of acceptor state is much larger in nanowires than that in the bulk SiC as a result of quantum confinement effect. Simulation results show that the reduced dimensionality in p-type SiC nanowires strongly reduces the capability of the materials to generate free carriers. It is also found that X-N-X (X = Al and Ga) complexes are energetically favored to form in the materials and have lower ionization energy than single doping. It is confirm that codoping is more suitable method for achieving low-resistivity semiconductors either in nano materials or bulk material.
metadata_24国际
KeywordSic Nanowires P-type Doping First Principles Modeling And Simulation
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2011-07-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21401
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Wang ZG,Xue SW,Li JB,et al. First principles study of p-type doping in SiC nanowires: role of quantum effect[J]. JOURNAL OF NANOPARTICLE RESEARCH,2011,13(7):2887-2892.
APA Wang ZG,Xue SW,Li JB,&Gao F.(2011).First principles study of p-type doping in SiC nanowires: role of quantum effect.JOURNAL OF NANOPARTICLE RESEARCH,13(7),2887-2892.
MLA Wang ZG,et al."First principles study of p-type doping in SiC nanowires: role of quantum effect".JOURNAL OF NANOPARTICLE RESEARCH 13.7(2011):2887-2892.
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