SEMI OpenIR  > 中科院半导体材料科学重点实验室
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device
Wu J; Lu XQ; Jin P; Meng XQ; Wang ZG
2011
Source PublicationCHINESE PHYSICS B
Volume20Issue:6Pages:Art. No. 064202
AbstractA broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection (AR) coating. Tuning bandwidths of 106 nm and 117 nm are achieved under 3-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current.
KeywordLight-emitting-diodes Optical-properties Tuning Range Nm Emission Spectrum Spectroscopy
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2011-07-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21400
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wu J,Lu XQ,Jin P,et al. Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device[J]. CHINESE PHYSICS B,2011,20(6):Art. No. 064202.
APA Wu J,Lu XQ,Jin P,Meng XQ,&Wang ZG.(2011).Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device.CHINESE PHYSICS B,20(6),Art. No. 064202.
MLA Wu J,et al."Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device".CHINESE PHYSICS B 20.6(2011):Art. No. 064202.
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