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Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors
Wang YB; Xu Y; Zhang Y; Yu X; Song GF; Chen LH
2011
Source PublicationCHINESE PHYSICS B
Volume20Issue:6Pages:Art. No. 067302
AbstractThis paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark current, resistance-area product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. The superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. The optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. To make a compromise between the electrical and optical performances, the photodetector with a doping concentration of 3 x 10(15) cm(-3) in the active region is believed to have the best overall performances.
KeywordInas/gasb Superlattices P-doping Concentration Electrical And Optical Properties
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2011-07-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21399
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
Wang YB,Xu Y,Zhang Y,et al. Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors[J]. CHINESE PHYSICS B,2011,20(6):Art. No. 067302.
APA Wang YB,Xu Y,Zhang Y,Yu X,Song GF,&Chen LH.(2011).Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors.CHINESE PHYSICS B,20(6),Art. No. 067302.
MLA Wang YB,et al."Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors".CHINESE PHYSICS B 20.6(2011):Art. No. 067302.
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