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Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates
Wang W; Su SJ; Zheng J; Zhang GZ; Zuo YH; Cheng BW; Wang QM
2011
Source PublicationCHINESE PHYSICS B
Volume20Issue:6Pages:Art. No. 068103
AbstractEpitaxial Ge1-xSnx alloys are grown separately on a Ge-buffer/Si(100) substrate and directly on a Si(100)subs trate by molecular beam epitaxy (MBE) at low temperature. In the case of the Ge buffer/Si(100)substrate, a high crystalline quality strained Ge0.97Sn0.03 alloy is grown, with a chi(min) value of 6.7% measured by channeling and random Rutherford backscattering spectrometry (RBS), and a surface root-mean-square (RMS) roughness of 1.568 nm obtained by atomic force microscopy (AFM). In the case of the Si(100)substrate, strain-relaxed Ge0.97Sn0.03 alloys are epitaxially grown at 150 degrees C-300 degrees C, with the degree of strain relaxation being more than 96%. The X-ray diffraction (XRD) and AFM measurements demonstrate that the alloys each have a good crystallin equality and a relatively flat surface. The predominant defects accommodating the large misfit are Lomer edge dislocations at the interface,which are parallel to the interface plane and should not degrade electrical properties and device performance.
KeywordGesn Alloys Strained Strain-relaxed Molecular Beam Epitaxy
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2011-07-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21398
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Wang W,Su SJ,Zheng J,et al. Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates[J]. CHINESE PHYSICS B,2011,20(6):Art. No. 068103.
APA Wang W.,Su SJ.,Zheng J.,Zhang GZ.,Zuo YH.,...&Wang QM.(2011).Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates.CHINESE PHYSICS B,20(6),Art. No. 068103.
MLA Wang W,et al."Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates".CHINESE PHYSICS B 20.6(2011):Art. No. 068103.
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