Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy

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	Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy
	Pan X; Wang XL; Xiao HL; Wang CM; Yang CB; Li W; Wang WY; Jin P; Wang ZG
	2011
Source Publication	APPLIED SURFACE SCIENCE
Volume	257 Issue:20 Pages:8718-8721
Abstract	Al0.91Ga0.09N epilayers have been obtained by pulsed atomic layer epitaxy (PALE) technique on sapphire (0 0 0 1) substrates. Deep ultraviolet (DUV) photoluminescence (PL) spectroscopy and Raman scattering spectrum have been employed to study the optical transitions in Al0.91Ga0.09N epilayers. We found the exciton-phonon interaction by fitting the asymmetric PL peak, in which the transverse optical phonon (TO) and the longitudinal optical (LO) phonon are the main contributor. The abnormal S-shaped temperature dependence of the PL band peak is less pronounced or has disappeared. Further analysis shows that there possibly exists a high density of deeper localized state (similar to 90 meV) in Al0.91Ga0.09N. The formation of these localized states provides a favorable condition for efficient light emission.
Keyword	Photoluminescence Raman Scattering Pulsed Atomic Layer Epitaxy Algan Alloys
Subject Area	半导体材料
Indexed By	SCI
Language	英语
Date Available	2011-07-07
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/21396
Collection	半导体材料科学中心
Recommended Citation GB/T 7714	Pan X,Wang XL,Xiao HL,et al. Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy[J]. APPLIED SURFACE SCIENCE,2011,257(20):8718-8721.
APA	Pan X.,Wang XL.,Xiao HL.,Wang CM.,Yang CB.,...&Wang ZG.(2011).Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy.APPLIED SURFACE SCIENCE,257(20),8718-8721.
MLA	Pan X,et al."Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy".APPLIED SURFACE SCIENCE 257.20(2011):8718-8721.

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