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Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy
Pan X; Wang XL; Xiao HL; Wang CM; Yang CB; Li W; Wang WY; Jin P; Wang ZG
2011
Source PublicationAPPLIED SURFACE SCIENCE
Volume257Issue:20Pages:8718-8721
AbstractAl0.91Ga0.09N epilayers have been obtained by pulsed atomic layer epitaxy (PALE) technique on sapphire (0 0 0 1) substrates. Deep ultraviolet (DUV) photoluminescence (PL) spectroscopy and Raman scattering spectrum have been employed to study the optical transitions in Al0.91Ga0.09N epilayers. We found the exciton-phonon interaction by fitting the asymmetric PL peak, in which the transverse optical phonon (TO) and the longitudinal optical (LO) phonon are the main contributor. The abnormal S-shaped temperature dependence of the PL band peak is less pronounced or has disappeared. Further analysis shows that there possibly exists a high density of deeper localized state (similar to 90 meV) in Al0.91Ga0.09N. The formation of these localized states provides a favorable condition for efficient light emission.
KeywordPhotoluminescence Raman Scattering Pulsed Atomic Layer Epitaxy Algan Alloys
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2011-07-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21396
Collection半导体材料科学中心
Recommended Citation
GB/T 7714
Pan X,Wang XL,Xiao HL,et al. Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy[J]. APPLIED SURFACE SCIENCE,2011,257(20):8718-8721.
APA Pan X.,Wang XL.,Xiao HL.,Wang CM.,Yang CB.,...&Wang ZG.(2011).Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy.APPLIED SURFACE SCIENCE,257(20),8718-8721.
MLA Pan X,et al."Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy".APPLIED SURFACE SCIENCE 257.20(2011):8718-8721.
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