Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system

	Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system
	Jiang CY; Chen YH; Ma H; Yu JL; Liu Y
	2011
Source Publication	APPLIED PHYSICS LETTERS
Volume	98 Issue:23 Pages:Art. No. 232116
Abstract	In this letter we investigated the InAs/InAlAs quantum wires (QWRs) superlattice by optically exciting the structure with near-infrared radiation. By varying the helicity of the radiation at room temperature we observed the circular photogalvanic effect related to the C-2v symmetry of the structure, which could be attributed to the formation of a quasi-two-dimensional system underlying in the vicinity of the QWRs pattern. The ratio of Rashba and Dresselhaus terms shows an evolution of the spin-orbit interaction in quasi-two-dimensional structure with the QWR layer deposition thickness.
Keyword	Optical-properties Dots
Subject Area	半导体材料
Indexed By	SCI
Language	英语
Date Available	2011-07-07
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/21395
Collection	中科院半导体材料科学重点实验室
Recommended Citation GB/T 7714	Jiang CY,Chen YH,Ma H,et al. Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system[J]. APPLIED PHYSICS LETTERS,2011,98(23):Art. No. 232116.
APA	Jiang CY,Chen YH,Ma H,Yu JL,&Liu Y.(2011).Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system.APPLIED PHYSICS LETTERS,98(23),Art. No. 232116.
MLA	Jiang CY,et al."Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system".APPLIED PHYSICS LETTERS 98.23(2011):Art. No. 232116.

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