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Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system
Jiang CY; Chen YH; Ma H; Yu JL; Liu Y
2011
Source PublicationAPPLIED PHYSICS LETTERS
Volume98Issue:23Pages:Art. No. 232116
AbstractIn this letter we investigated the InAs/InAlAs quantum wires (QWRs) superlattice by optically exciting the structure with near-infrared radiation. By varying the helicity of the radiation at room temperature we observed the circular photogalvanic effect related to the C-2v symmetry of the structure, which could be attributed to the formation of a quasi-two-dimensional system underlying in the vicinity of the QWRs pattern. The ratio of Rashba and Dresselhaus terms shows an evolution of the spin-orbit interaction in quasi-two-dimensional structure with the QWR layer deposition thickness.
KeywordOptical-properties Dots
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2011-07-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21395
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Jiang CY,Chen YH,Ma H,et al. Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system[J]. APPLIED PHYSICS LETTERS,2011,98(23):Art. No. 232116.
APA Jiang CY,Chen YH,Ma H,Yu JL,&Liu Y.(2011).Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system.APPLIED PHYSICS LETTERS,98(23),Art. No. 232116.
MLA Jiang CY,et al."Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system".APPLIED PHYSICS LETTERS 98.23(2011):Art. No. 232116.
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