Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system | |
Jiang CY![]() ![]() | |
2011 | |
Source Publication | APPLIED PHYSICS LETTERS
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Volume | 98Issue:23Pages:Art. No. 232116 |
Abstract | In this letter we investigated the InAs/InAlAs quantum wires (QWRs) superlattice by optically exciting the structure with near-infrared radiation. By varying the helicity of the radiation at room temperature we observed the circular photogalvanic effect related to the C-2v symmetry of the structure, which could be attributed to the formation of a quasi-two-dimensional system underlying in the vicinity of the QWRs pattern. The ratio of Rashba and Dresselhaus terms shows an evolution of the spin-orbit interaction in quasi-two-dimensional structure with the QWR layer deposition thickness. |
Keyword | Optical-properties Dots |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2011-07-07 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/21395 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Jiang CY,Chen YH,Ma H,et al. Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system[J]. APPLIED PHYSICS LETTERS,2011,98(23):Art. No. 232116. |
APA | Jiang CY,Chen YH,Ma H,Yu JL,&Liu Y.(2011).Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system.APPLIED PHYSICS LETTERS,98(23),Art. No. 232116. |
MLA | Jiang CY,et al."Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system".APPLIED PHYSICS LETTERS 98.23(2011):Art. No. 232116. |
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