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Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions
Jiang LJ; Wang XL; Xiao HL; Wang ZG; Yang CB; Zhang ML
2011
Source PublicationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume104Issue:1Pages:429-432
AbstractGaN films grown by MOCVD were implanted by Sm ions under different implantation and annealing conditions, in order to optimize the implantation parameters. The structural and magnetic measurements indicated a reduction of defect concentration and an increase of saturation magnetization when samples were implanted at 400A degrees C, most probably due to the increased substitutional fraction of Sm ions. While the subsequent annealing process further decreased the damage in GaN lattice, but reduced the saturation magnetization on the contrary, caused by the decomposition of the surface layer and the formation of Sm-defect complexes during high-temperature annealing.
KeywordGan Ferromagnetic Implantation Annealing
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2011-07-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21394
Collection半导体材料科学中心
Recommended Citation
GB/T 7714
Jiang LJ,Wang XL,Xiao HL,et al. Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2011,104(1):429-432.
APA Jiang LJ,Wang XL,Xiao HL,Wang ZG,Yang CB,&Zhang ML.(2011).Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,104(1),429-432.
MLA Jiang LJ,et al."Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 104.1(2011):429-432.
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