| Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions | |
Jiang LJ; Wang XL; Xiao HL; Wang ZG; Yang CB; Zhang ML
| |
| 2011 | |
| Source Publication | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| Volume | 104Issue:1Pages:429-432 |
| Abstract | GaN films grown by MOCVD were implanted by Sm ions under different implantation and annealing conditions, in order to optimize the implantation parameters. The structural and magnetic measurements indicated a reduction of defect concentration and an increase of saturation magnetization when samples were implanted at 400A degrees C, most probably due to the increased substitutional fraction of Sm ions. While the subsequent annealing process further decreased the damage in GaN lattice, but reduced the saturation magnetization on the contrary, caused by the decomposition of the surface layer and the formation of Sm-defect complexes during high-temperature annealing. |
| Keyword | Gan Ferromagnetic Implantation Annealing |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2011-07-07 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/21394 |
| Collection | 半导体材料科学中心 |
| Recommended Citation GB/T 7714 | Jiang LJ,Wang XL,Xiao HL,et al. Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2011,104(1):429-432. |
| APA | Jiang LJ,Wang XL,Xiao HL,Wang ZG,Yang CB,&Zhang ML.(2011).Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,104(1),429-432. |
| MLA | Jiang LJ,et al."Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 104.1(2011):429-432. |
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| File Name/Size | DocType | Version | Access | License | ||
| Properties investiga（712KB） | 限制开放 | License | Application Full Text | |||
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