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Dislocation cross-slip in GaN single crystals under nanoindentation
Huang J; Xu K; Gong XJ; Wang JF; Fan YM; Liu JQ; Zeng XH; Ren GQ; Zhou TF; Yang H
2011
Source PublicationAPPLIED PHYSICS LETTERS
Volume98Issue:22Pages:Art. No. 221906
metadata_24国内
KeywordBerkovich Nanoindentation Thin-films Indentation Mechanisms Epilayers
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2011-07-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21392
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Huang J,Xu K,Gong XJ,et al. Dislocation cross-slip in GaN single crystals under nanoindentation[J]. APPLIED PHYSICS LETTERS,2011,98(22):Art. No. 221906.
APA Huang J.,Xu K.,Gong XJ.,Wang JF.,Fan YM.,...&Yang H.(2011).Dislocation cross-slip in GaN single crystals under nanoindentation.APPLIED PHYSICS LETTERS,98(22),Art. No. 221906.
MLA Huang J,et al."Dislocation cross-slip in GaN single crystals under nanoindentation".APPLIED PHYSICS LETTERS 98.22(2011):Art. No. 221906.
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