The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films | |
Hao HY; Xing J; Li WM; Zeng XB; Kong GL; Liao XB; Hao, HY, China. Univ Geosci, Sch Mat Sci & Technol, Beijing 100083, Peoples R China. huiyinghaol@cugb.edu.cn | |
2011 | |
Source Publication | OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
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ISSN | 1842-6573 |
Volume | 5Issue:40545Pages:112-115 |
metadata_83 | [hao, huiying; xing, jie; li, weimin] china univ geosci, sch mat sci & technol, beijing 100083, peoples r china; [zeng, xiangbo; kong, guanglin; liao, xianbo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china |
Keyword | Nanocrystalline Silicon Thin Films Structure Photoelectrical Properties Stability Microcrystalline Silicon Transition Films Solar-cells Hydrogen |
Subject Area | 半导体材料 |
Funding Organization | Open Foundation of Key Laboratory of Semiconductor Materials Science Institute of Semiconductors, Chinese Academy of Sciences [KLSMS-0907]; Science and Technology Foundation of China University of Geosciences [200705] |
Indexed By | SCI |
Date Available | 2011-07-06 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/21369 |
Collection | 中科院半导体材料科学重点实验室 |
Corresponding Author | Hao, HY, China. Univ Geosci, Sch Mat Sci & Technol, Beijing 100083, Peoples R China. huiyinghaol@cugb.edu.cn |
Recommended Citation GB/T 7714 | Hao HY,Xing J,Li WM,et al. The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films[J]. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS,2011,5(40545):112-115. |
APA | Hao HY.,Xing J.,Li WM.,Zeng XB.,Kong GL.,...&Hao, HY, China. Univ Geosci, Sch Mat Sci & Technol, Beijing 100083, Peoples R China. huiyinghaol@cugb.edu.cn.(2011).The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films.OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS,5(40545),112-115. |
MLA | Hao HY,et al."The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films".OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS 5.40545(2011):112-115. |
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