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Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers
Wei Y; Ma WQ; Huang JL; Zhang YH; Huo YH; Cui K; Chen LH; Shi YL; Ma, WQ, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, POB 912, Beijing 100083, Peoples R China. wqma@semi.ac.cn
2011
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume98Issue:10Pages:Article no.103507
metadata_83[wei, yang; ma, wenquan; huang, jianliang; zhang, yanhua; huo, yongheng; cui, kai; chen, lianghui] chinese acad sci, inst semicond, lab nanooptoelect, beijing 100083, peoples r china; [shi, yanli] kunming inst phys, dept basic res & dev, kunming 650023, peoples r china
KeywordMu-m Detector Temperature Growth
Subject Area光电子学
Funding OrganizationChina's National 973 Research Programme [2010CB327602]; Natural Science Fund for Innovative Research Group [61021003]
Indexed BySCI
Language英语
Date Available2011-07-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21349
Collection纳米光电子实验室
Corresponding AuthorMa, WQ, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, POB 912, Beijing 100083, Peoples R China. wqma@semi.ac.cn
Recommended Citation
GB/T 7714
Wei Y,Ma WQ,Huang JL,et al. Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers[J]. APPLIED PHYSICS LETTERS,2011,98(10):Article no.103507.
APA Wei Y.,Ma WQ.,Huang JL.,Zhang YH.,Huo YH.,...&Ma, WQ, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, POB 912, Beijing 100083, Peoples R China. wqma@semi.ac.cn.(2011).Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers.APPLIED PHYSICS LETTERS,98(10),Article no.103507.
MLA Wei Y,et al."Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers".APPLIED PHYSICS LETTERS 98.10(2011):Article no.103507.
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