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Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers
Huang JL; Ma WQ; Wei Y; Zhang YH; Huo YH; Cui K; Chen LH; Ma, WQ, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, POB 912, Beijing 100083, Peoples R China. wqma@semi.ac.cn
2011
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume98Issue:10Pages:Article no.103501
metadata_83[huang, jianliang; ma, wenquan; wei, yang; zhang, yanhua; huo, yongheng; cui, kai; chen, lianghui] chinese acad sci, inst semicond, lab nanooptoelect, beijing 100083, peoples r china
Subject Area光电子学
Funding OrganizationChina's National 973 Research Programme [2010CB327602]; Natural Science Fund for Innovative Research Group [61021003]
Indexed BySCI
Language英语
Date Available2011-07-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21347
Collection纳米光电子实验室
Corresponding AuthorMa, WQ, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, POB 912, Beijing 100083, Peoples R China. wqma@semi.ac.cn
Recommended Citation
GB/T 7714
Huang JL,Ma WQ,Wei Y,et al. Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers[J]. APPLIED PHYSICS LETTERS,2011,98(10):Article no.103501.
APA Huang JL.,Ma WQ.,Wei Y.,Zhang YH.,Huo YH.,...&Ma, WQ, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, POB 912, Beijing 100083, Peoples R China. wqma@semi.ac.cn.(2011).Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers.APPLIED PHYSICS LETTERS,98(10),Article no.103501.
MLA Huang JL,et al."Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers".APPLIED PHYSICS LETTERS 98.10(2011):Article no.103501.
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