Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers | |
Tang HM; Zheng ZS; Zhang EX; Yu F![]() | |
2011 | |
Source Publication | ACTA PHYSICA SINICA
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ISSN | 1000-3290 |
Volume | 60Issue:5Pages:Article no.56104 |
metadata_83 | [tang hai-ma; zheng zhong-shan] univ jinan, dept phys, jinan 250022, peoples r china; [zhang en-xia] shanghai univ engn sci, coll mat engn, shanghai 201620, peoples r china; [yu fang; li ning; wang ning-juan; li guo-huan; ma hong-zhi] chinese acad sci, inst semicond, beijing 100083, peoples r china |
Keyword | Separation By Oxygen Implantation Buried Oxide Nitrogen Implantation Positive Charge Density Radiation Hardness Implanting Nitrogen Ion-implantation Improvement Technology Oxygen Layer |
Subject Area | 微电子学 |
Funding Organization | Doctoral Foundation of University of Jinan ; Shanghai Municipal Education Commission [08YZ156] |
Indexed By | SCI |
Language | 中文 |
Date Available | 2011-07-06 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/21325 |
Collection | 半导体集成技术工程研究中心 |
Corresponding Author | Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China. zszheng513@163.com |
Recommended Citation GB/T 7714 | Tang HM,Zheng ZS,Zhang EX,et al. Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers[J]. ACTA PHYSICA SINICA,2011,60(5):Article no.56104. |
APA | Tang HM.,Zheng ZS.,Zhang EX.,Yu F.,Li N.,...&Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China. zszheng513@163.com.(2011).Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers.ACTA PHYSICA SINICA,60(5),Article no.56104. |
MLA | Tang HM,et al."Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers".ACTA PHYSICA SINICA 60.5(2011):Article no.56104. |
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