Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers

	Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers
	Tang HM; Zheng ZS; Zhang EX; Yu F; Li N; Wang NJ; Li GH; Ma HZ; Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China. zszheng513@163.com
	2011
Source Publication	ACTA PHYSICA SINICA
ISSN	1000-3290
Volume	60 Issue:5 Pages:Article no.56104
metadata_83	[tang hai-ma; zheng zhong-shan] univ jinan, dept phys, jinan 250022, peoples r china; [zhang en-xia] shanghai univ engn sci, coll mat engn, shanghai 201620, peoples r china; [yu fang; li ning; wang ning-juan; li guo-huan; ma hong-zhi] chinese acad sci, inst semicond, beijing 100083, peoples r china
Keyword	Separation By Oxygen Implantation Buried Oxide Nitrogen Implantation Positive Charge Density Radiation Hardness Implanting Nitrogen Ion-implantation Improvement Technology Oxygen Layer
Subject Area	微电子学
Funding Organization	Doctoral Foundation of University of Jinan ; Shanghai Municipal Education Commission [08YZ156]
Indexed By	SCI
Language	中文
Date Available	2011-07-06
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/21325
Collection	半导体集成技术工程研究中心
Corresponding Author	Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China. zszheng513@163.com
Recommended Citation GB/T 7714	Tang HM,Zheng ZS,Zhang EX,et al. Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers[J]. ACTA PHYSICA SINICA,2011,60(5):Article no.56104.
APA	Tang HM.,Zheng ZS.,Zhang EX.,Yu F.,Li N.,...&Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China. zszheng513@163.com.(2011).Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers.ACTA PHYSICA SINICA,60(5),Article no.56104.
MLA	Tang HM,et al."Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers".ACTA PHYSICA SINICA 60.5(2011):Article no.56104.

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