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1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process
Xu DW; Yoon SF; Ding Y; Tong CZ; Fan WJ; Zhao LJ; Xu, DW, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singaporen060085@ntu.edu.sg; esfyoon@ntu.edu.sg; YDing@ntu.edu.sg; CZTong@ntu.edu.sg; ewjfan@ntu.edu.sg; ljzhao@red.semi.ac.cn
2011
Source PublicationIEEE PHOTONICS TECHNOLOGY LETTERS
ISSN1041-1135
Volume23Issue:2Pages:91-93
metadata_83[xu, d. w.; yoon, s. f.; ding, y.; tong, c. z.; fan, w. j.] nanyang technol univ, sch elect & elect engn, singapore 639798, singapore; [zhao, l. j.] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordDielectric-free Approach Quantum Dot (Qd) Surface-relief Technique Vertical-cavity Surface-emitting Lasers (Vcsels) Emitting Lasers
Subject Area半导体材料
Funding OrganizationA*STAR Singapore-Poland [0621200015]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21321
Collection中科院半导体材料科学重点实验室
Corresponding AuthorXu, DW, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singaporen060085@ntu.edu.sg; esfyoon@ntu.edu.sg; YDing@ntu.edu.sg; CZTong@ntu.edu.sg; ewjfan@ntu.edu.sg; ljzhao@red.semi.ac.cn
Recommended Citation
GB/T 7714
Xu DW,Yoon SF,Ding Y,et al. 1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process[J]. IEEE PHOTONICS TECHNOLOGY LETTERS,2011,23(2):91-93.
APA Xu DW.,Yoon SF.,Ding Y.,Tong CZ.,Fan WJ.,...&ljzhao@red.semi.ac.cn.(2011).1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process.IEEE PHOTONICS TECHNOLOGY LETTERS,23(2),91-93.
MLA Xu DW,et al."1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process".IEEE PHOTONICS TECHNOLOGY LETTERS 23.2(2011):91-93.
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