SEMI OpenIR  > 中科院半导体材料科学重点实验室
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
Shi K; Yang AL; Wang J; Song HP; Xu XQ; Sang L; Wei HY; Yang SY; Liu XL; Zhu QS; Wang ZG; Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn; xlliu@semi.ac.cn
2011
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume314Issue:1Pages:39-42
metadata_83[shi, k.; yang, a. l.; wang, j.; song, h. p.; xu, x. q.; sang, l.; wei, h. y.; yang, s. y.; liu, x. l.; zhu, q. s.; wang, z. g.] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordMetal Organic Chemical Vapor Deposition Sapphire Zinc Compounds Semiconducting Ii-vi Materials Vapor-phase Epitaxy Optical-properties Zno Nanorods Raman-scattering M-plane Films Photoluminescence Deposition Nanowires Fields
Subject Area半导体材料
Funding Organization863 High Technology R&D Program of China [2007AA03Z402, 2007AA03Z451]; Special Funds for Major State Basic Research Project (973 program) of China [2006CB604907]; National Science Foundation of China [60506002, 60776015]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21313
Collection中科院半导体材料科学重点实验室
Corresponding AuthorShi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn; xlliu@semi.ac.cn
Recommended Citation
GB/T 7714
Shi K,Yang AL,Wang J,et al. The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD[J]. JOURNAL OF CRYSTAL GROWTH,2011,314(1):39-42.
APA Shi K.,Yang AL.,Wang J.,Song HP.,Xu XQ.,...&xlliu@semi.ac.cn.(2011).The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD.JOURNAL OF CRYSTAL GROWTH,314(1),39-42.
MLA Shi K,et al."The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD".JOURNAL OF CRYSTAL GROWTH 314.1(2011):39-42.
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