The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing | |
Zhou GY; Chen YH; Yu JL; Zhou XL![]() ![]() ![]() | |
2011 | |
Source Publication | APPLIED PHYSICS LETTERS
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ISSN | 0003-6951 |
Volume | 98Issue:7Pages:Article no.71914 |
metadata_83 | [zhou, g. y.; chen, y. h.; yu, j. l.; zhou, x. l.; ye, x. l.; jin, p.; wang, z. g.] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china |
Keyword | Spectroscopy |
Subject Area | 半导体材料 |
Funding Organization | National Natural Science Foundation of China [60625402, 60990313]; 973 program [2006CB604908, 2006CB921607] |
Indexed By | SCI |
Language | 英语 |
Date Available | 2011-07-05 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/21309 |
Collection | 中科院半导体材料科学重点实验室 |
Corresponding Author | Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn |
Recommended Citation GB/T 7714 | Zhou GY,Chen YH,Yu JL,et al. The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing[J]. APPLIED PHYSICS LETTERS,2011,98(7):Article no.71914. |
APA | Zhou GY.,Chen YH.,Yu JL.,Zhou XL.,Ye XL.,...&Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn.(2011).The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing.APPLIED PHYSICS LETTERS,98(7),Article no.71914. |
MLA | Zhou GY,et al."The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing".APPLIED PHYSICS LETTERS 98.7(2011):Article no.71914. |
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