The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing

	The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing
	Zhou GY; Chen YH; Yu JL; Zhou XL; Ye XL; Jin P; Wang ZG; Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
	2011
Source Publication	APPLIED PHYSICS LETTERS
ISSN	0003-6951
Volume	98 Issue:7 Pages:Article no.71914
metadata_83	[zhou, g. y.; chen, y. h.; yu, j. l.; zhou, x. l.; ye, x. l.; jin, p.; wang, z. g.] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
Keyword	Spectroscopy
Subject Area	半导体材料
Funding Organization	National Natural Science Foundation of China [60625402, 60990313]; 973 program [2006CB604908, 2006CB921607]
Indexed By	SCI
Language	英语
Date Available	2011-07-05
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/21309
Collection	中科院半导体材料科学重点实验室
Corresponding Author	Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
Recommended Citation GB/T 7714	Zhou GY,Chen YH,Yu JL,et al. The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing[J]. APPLIED PHYSICS LETTERS,2011,98(7):Article no.71914.
APA	Zhou GY.,Chen YH.,Yu JL.,Zhou XL.,Ye XL.,...&Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn.(2011).The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing.APPLIED PHYSICS LETTERS,98(7),Article no.71914.
MLA	Zhou GY,et al."The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing".APPLIED PHYSICS LETTERS 98.7(2011):Article no.71914.

Files in This Item:
File Name/Size	DocType	Version	Access	License
201257.pdf（333KB）			限制开放	--	Application Full Text

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中科院半导体材料科学重点实验室知识库