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The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing
Zhou GY; Chen YH; Yu JL; Zhou XL; Ye XL; Jin P; Wang ZG; Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
2011
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume98Issue:7Pages:Article no.71914
metadata_83[zhou, g. y.; chen, y. h.; yu, j. l.; zhou, x. l.; ye, x. l.; jin, p.; wang, z. g.] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordSpectroscopy
Subject Area半导体材料
Funding OrganizationNational Natural Science Foundation of China [60625402, 60990313]; 973 program [2006CB604908, 2006CB921607]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21309
Collection中科院半导体材料科学重点实验室
Corresponding AuthorChen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
Recommended Citation
GB/T 7714
Zhou GY,Chen YH,Yu JL,et al. The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing[J]. APPLIED PHYSICS LETTERS,2011,98(7):Article no.71914.
APA Zhou GY.,Chen YH.,Yu JL.,Zhou XL.,Ye XL.,...&Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn.(2011).The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing.APPLIED PHYSICS LETTERS,98(7),Article no.71914.
MLA Zhou GY,et al."The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing".APPLIED PHYSICS LETTERS 98.7(2011):Article no.71914.
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