SEMI OpenIR  > 中科院半导体材料科学重点实验室
IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES
Hao GD; Chen YH; Hao, GD, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Box 912, Beijing 100083, Peoples R China. gdhao@semi.ac.cn
2010
Source PublicationINTERNATIONAL JOURNAL OF MODERN PHYSICS B
ISSN0217-9792
Volume24Issue:27Pages:5439-5450
metadata_83[hao, guo-dong; chen, y. h.] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordStrain Effect Optical Anisotropy A-plane R-plane Continuous-wave Operation Light-emitting-diodes Laser-diodes Polarization Anisotropy Quantum-wells Semiconductors
Subject Area半导体材料
Funding Organization973 program [2006CB604908, 2006CB921607]; National Natural Science Foundation of China [60625402]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21301
Collection中科院半导体材料科学重点实验室
Corresponding AuthorHao, GD, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Box 912, Beijing 100083, Peoples R China. gdhao@semi.ac.cn
Recommended Citation
GB/T 7714
Hao GD,Chen YH,Hao, GD, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Box 912, Beijing 100083, Peoples R China. gdhao@semi.ac.cn. IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B,2010,24(27):5439-5450.
APA Hao GD,Chen YH,&Hao, GD, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Box 912, Beijing 100083, Peoples R China. gdhao@semi.ac.cn.(2010).IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES.INTERNATIONAL JOURNAL OF MODERN PHYSICS B,24(27),5439-5450.
MLA Hao GD,et al."IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES".INTERNATIONAL JOURNAL OF MODERN PHYSICS B 24.27(2010):5439-5450.
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