SEMI OpenIR  > 中科院半导体材料科学重点实验室
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering
Ying J; Zhang XW; Yin ZG; Tan HR; Zhang SG; Fan YM; Ying, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. xwzhang@semi.ac.cn
2011
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume109Issue:2Pages:Article no.23716
metadata_83[ying, j.; zhang, x. w.; yin, z. g.; tan, h. r.; zhang, s. g.; fan, y. m.] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordHigh-pressure Synthesis Vapor-deposition Nucleation Emission Diamond Growth
Subject Area半导体材料
Funding OrganizationNational Basic Research Program of China (973 Program) [2010CB933803]; National Natural Science Foundation of China [51071145]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21299
Collection中科院半导体材料科学重点实验室
Corresponding AuthorYing, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. xwzhang@semi.ac.cn
Recommended Citation
GB/T 7714
Ying J,Zhang XW,Yin ZG,et al. Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering[J]. JOURNAL OF APPLIED PHYSICS,2011,109(2):Article no.23716.
APA Ying J.,Zhang XW.,Yin ZG.,Tan HR.,Zhang SG.,...&Ying, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. xwzhang@semi.ac.cn.(2011).Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering.JOURNAL OF APPLIED PHYSICS,109(2),Article no.23716.
MLA Ying J,et al."Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering".JOURNAL OF APPLIED PHYSICS 109.2(2011):Article no.23716.
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