SEMI OpenIR  > 中科院半导体材料科学重点实验室
Different growth mechanisms of bimodal In As/GaAs QDs
Zhou GY; Chen YH; Zhou XL; Xu B; Ye XL; Wang ZG; Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
2010
Source PublicationPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
ISSN1386-9477
Volume43Issue:1Pages:308-311
metadata_83[zhou, g. y.; chen, y. h.; zhou, x. l.; xu, b.; ye, x. l.; wang, z. g.] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordInas Quantum Dots Gaas(001) Relaxation Transition Gaas
Subject Area半导体材料
Funding OrganizationNational Natural Science Foundation of China [60625402, 60990313]; 973 program [2006CB604908, 2006CB921607]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21293
Collection中科院半导体材料科学重点实验室
Corresponding AuthorChen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
Recommended Citation
GB/T 7714
Zhou GY,Chen YH,Zhou XL,et al. Different growth mechanisms of bimodal In As/GaAs QDs[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2010,43(1):308-311.
APA Zhou GY.,Chen YH.,Zhou XL.,Xu B.,Ye XL.,...&Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn.(2010).Different growth mechanisms of bimodal In As/GaAs QDs.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,43(1),308-311.
MLA Zhou GY,et al."Different growth mechanisms of bimodal In As/GaAs QDs".PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 43.1(2010):308-311.
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