SEMI OpenIR  > 中科院半导体材料科学重点实验室
A Sampled Grating DBR Laser Monolithically Integrated by Using SOAs with 22 mW Output Power and 51 ITU 100 GHz Channels over 43 nm
Liu Y; Ye N; Zhou DB; Wang BJ; Pan JQ; Zhao LJ; Wang W; Liu, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. matsu@semi.ac.cn
2011
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume28Issue:2Pages:Article no.24212
metadata_83[liu yang; ye nan; zhou dai-bing; wang bao-jun; pan jiao-qing; zhao ling-juan; wang wei] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordTuning Range Performance Design
Subject Area半导体材料
Funding OrganizationNational High-Tech Research and Development Program of China [2006AA01Z256, 2007AA03Z419, 2007AA03Z417]; National Basic Research Program of China [2006CB604901, 2006CB604902]; National Natural Science Foundation of China [90401025, 60736036, 60706009, 60777021]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21289
Collection中科院半导体材料科学重点实验室
Corresponding AuthorLiu, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. matsu@semi.ac.cn
Recommended Citation
GB/T 7714
Liu Y,Ye N,Zhou DB,et al. A Sampled Grating DBR Laser Monolithically Integrated by Using SOAs with 22 mW Output Power and 51 ITU 100 GHz Channels over 43 nm[J]. CHINESE PHYSICS LETTERS,2011,28(2):Article no.24212.
APA Liu Y.,Ye N.,Zhou DB.,Wang BJ.,Pan JQ.,...&Liu, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. matsu@semi.ac.cn.(2011).A Sampled Grating DBR Laser Monolithically Integrated by Using SOAs with 22 mW Output Power and 51 ITU 100 GHz Channels over 43 nm.CHINESE PHYSICS LETTERS,28(2),Article no.24212.
MLA Liu Y,et al."A Sampled Grating DBR Laser Monolithically Integrated by Using SOAs with 22 mW Output Power and 51 ITU 100 GHz Channels over 43 nm".CHINESE PHYSICS LETTERS 28.2(2011):Article no.24212.
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