| GaN grown with InGaN as a weakly bonded layer | |
Xu XQ; Guo Y; Liu XL; Liu JM; Song HP ; Zhang BA; Wang J; Yang SY; Wei HY; Zhu QS; Wang ZG; Xu, XQ, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xxq@semi.ac.cn; xlliu@semi.ac.cn; qszhu@semi.ac.cn
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| 2011 | |
| Source Publication | CRYSTENGCOMM
 |
| ISSN | 1466-8033 |
| Volume | 13Issue:5Pages:1580-1585 |
| metadata_83 | [xu, xiaoqing; guo, yan; liu, xianglin; liu, jianming; song, huaping; zhang, biao; wang, jun; yang, shaoyan; wei, hongyuan; zhu, qinsheng; wang, zhanguo] chinese acad sci, key lab semicond mat sci, inst semicond, beijing 100083, peoples r china |
| Keyword | Chemical-vapor-deposition Si(001) Substrate Strain Epitaxy |
| Subject Area | 半导体材料 |
| Funding Organization | National Science Foundation of China [60776015, 60976008]; (973 program) of China [2006CB604907]; 863 High Technology R&D Program of China [2007AA03Z402, 2007AA03Z451] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2011-07-05 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/21287 |
| Collection | 中科院半导体材料科学重点实验室 |
| Corresponding Author | Xu, XQ, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xxq@semi.ac.cn; xlliu@semi.ac.cn; qszhu@semi.ac.cn |
| Recommended Citation GB/T 7714 | Xu XQ,Guo Y,Liu XL,et al. GaN grown with InGaN as a weakly bonded layer[J]. CRYSTENGCOMM,2011,13(5):1580-1585. |
| APA | Xu XQ.,Guo Y.,Liu XL.,Liu JM.,Song HP.,...&qszhu@semi.ac.cn.(2011).GaN grown with InGaN as a weakly bonded layer.CRYSTENGCOMM,13(5),1580-1585. |
| MLA | Xu XQ,et al."GaN grown with InGaN as a weakly bonded layer".CRYSTENGCOMM 13.5(2011):1580-1585. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 201225.pdf（524KB） | 限制开放 | -- | Application Full Text | |||
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