SEMI OpenIR  > 中科院半导体材料科学重点实验室
GaN grown with InGaN as a weakly bonded layer
Xu XQ; Guo Y; Liu XL; Liu JM; Song HP; Zhang BA; Wang J; Yang SY; Wei HY; Zhu QS; Wang ZG; Xu, XQ, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xxq@semi.ac.cn; xlliu@semi.ac.cn; qszhu@semi.ac.cn
2011
Source PublicationCRYSTENGCOMM
ISSN1466-8033
Volume13Issue:5Pages:1580-1585
metadata_83[xu, xiaoqing; guo, yan; liu, xianglin; liu, jianming; song, huaping; zhang, biao; wang, jun; yang, shaoyan; wei, hongyuan; zhu, qinsheng; wang, zhanguo] chinese acad sci, key lab semicond mat sci, inst semicond, beijing 100083, peoples r china
KeywordChemical-vapor-deposition Si(001) Substrate Strain Epitaxy
Subject Area半导体材料
Funding OrganizationNational Science Foundation of China [60776015, 60976008]; (973 program) of China [2006CB604907]; 863 High Technology R&D Program of China [2007AA03Z402, 2007AA03Z451]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21287
Collection中科院半导体材料科学重点实验室
Corresponding AuthorXu, XQ, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xxq@semi.ac.cn; xlliu@semi.ac.cn; qszhu@semi.ac.cn
Recommended Citation
GB/T 7714
Xu XQ,Guo Y,Liu XL,et al. GaN grown with InGaN as a weakly bonded layer[J]. CRYSTENGCOMM,2011,13(5):1580-1585.
APA Xu XQ.,Guo Y.,Liu XL.,Liu JM.,Song HP.,...&qszhu@semi.ac.cn.(2011).GaN grown with InGaN as a weakly bonded layer.CRYSTENGCOMM,13(5),1580-1585.
MLA Xu XQ,et al."GaN grown with InGaN as a weakly bonded layer".CRYSTENGCOMM 13.5(2011):1580-1585.
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