SEMI OpenIR  > 中科院半导体材料科学重点实验室
Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer
Li TF; Chen YH; Lei W; Zhou XL; Wang ZG; Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
2011
Source PublicationPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
ISSN1386-9477
Volume43Issue:4Pages:869-873
metadata_83[li, tianfeng; chen, yonghai; zhou, xiaolong; wang, zhanguo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; [li, tianfeng] tsinghua univ, dept phys, beijing 100084, peoples r china; [lei, wen] australian natl univ, res sch phys & engn, dept elect mat engn, canberra, act 0200, australia
KeywordQuantum Dots Light-emission Wells Photoluminescence
Subject Area半导体材料
Funding Organization973 program [2006CB604908, 2006CB921607]; National Natural Science Foundation of China [60625402, 60990313]; Australian Research Council [DP0774366]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21285
Collection中科院半导体材料科学重点实验室
Corresponding AuthorChen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
Recommended Citation
GB/T 7714
Li TF,Chen YH,Lei W,et al. Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2011,43(4):869-873.
APA Li TF,Chen YH,Lei W,Zhou XL,Wang ZG,&Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. yhchen@semi.ac.cn.(2011).Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,43(4),869-873.
MLA Li TF,et al."Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer".PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 43.4(2011):869-873.
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