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Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots
Plumhof JD; Krapek V; Ding F; Jons KD; Hafenbrak R; Klenovsky P; Herklotz A; Dorr K; Michler P; Rastelli A; Schmidt OG; Plumhof, JD, IFW Dresden, Inst Integrat Nanosci, Helmholtzstr 20, D-01069 Dresden, Germanyj.d.plumhof@ifw-dresden.de; a.rastelli@ifw-dresden.de
2011
Source PublicationPHYSICAL REVIEW B
ISSN1098-0121
Volume83Issue:12Pages:Article no.121302
metadata_83[plumhof, j. d.; ding, f.; rastelli, a.; schmidt, o. g.] ifw dresden, inst integrat nanosci, d-01069 dresden, germany; [krapek, v.; klenovsky, p.] masaryk univ, inst condensed matter phys, cz-61137 brno, czech republic; [ding, f.] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; [joens, k. d.; hafenbrak, r.; michler, p.] univ stuttgart, inst halbleiteropt & funkt grenzflachen, d-70569 stuttgart, germany; [herklotz, a.; doerr, k.] ifw dresden, inst metall mat, d-01069 dresden, germany
KeywordEntangled Photon Pairs Semiconductor Spin
Subject Area半导体材料
Funding OrganizationInstitutional research program [MSM 0021622410]; GACR [GA202/09/0676]; DFG [FOR730, SFB 787]; BMBF [QK_QuaHL-Rep, 01BQ1032]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21279
Collection中科院半导体材料科学重点实验室
Corresponding AuthorPlumhof, JD, IFW Dresden, Inst Integrat Nanosci, Helmholtzstr 20, D-01069 Dresden, Germanyj.d.plumhof@ifw-dresden.de; a.rastelli@ifw-dresden.de
Recommended Citation
GB/T 7714
Plumhof JD,Krapek V,Ding F,et al. Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots[J]. PHYSICAL REVIEW B,2011,83(12):Article no.121302.
APA Plumhof JD.,Krapek V.,Ding F.,Jons KD.,Hafenbrak R.,...&a.rastelli@ifw-dresden.de.(2011).Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots.PHYSICAL REVIEW B,83(12),Article no.121302.
MLA Plumhof JD,et al."Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots".PHYSICAL REVIEW B 83.12(2011):Article no.121302.
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