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Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG; Lin, ZJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn
2011
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume98Issue:12Pages:Article no.123512
metadata_83[lv, yuanjie; lin, zhaojun; zhang, yu; meng, lingguo; luan, chongbiao; cao, zhifang] shandong univ, sch phys, jinan 250100, peoples r china; [chen, hong] chinese acad sci, beijing natl lab condensed matter phys, inst phys, beijing 100080, peoples r china; [wang, zhanguo] chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
Keyword2-dimensional Electron-gas Interfacial Layer Mobility
Subject Area半导体材料
Funding OrganizationNational Natural Science Foundation of China [10774090]; National Basic Research Program of China [2007CB936602]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21275
Collection中科院半导体材料科学重点实验室
Corresponding AuthorLin, ZJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn
Recommended Citation
GB/T 7714
Lv YJ,Lin ZJ,Zhang Y,et al. Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors[J]. APPLIED PHYSICS LETTERS,2011,98(12):Article no.123512.
APA Lv YJ.,Lin ZJ.,Zhang Y.,Meng LG.,Luan CB.,...&Lin, ZJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn.(2011).Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors.APPLIED PHYSICS LETTERS,98(12),Article no.123512.
MLA Lv YJ,et al."Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors".APPLIED PHYSICS LETTERS 98.12(2011):Article no.123512.
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