SEMI OpenIR  > 中科院半导体材料科学重点实验室
Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures
Yin CM; Tang N; Zhang S; Duan JX; Xu FJ; Song J; Mei FH; Wang XQ; Shen B; Chen YH; Yu JL; Ma H; Yin, CM, Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop, Beijing 100871, Peoples R China. ntang@pku.edu.cn; bshen@pku.edu.cn
2011
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume98Issue:12Pages:Article no.122104
metadata_83[yin, c. m.; tang, n.; zhang, s.; duan, j. x.; xu, f. j.; song, j.; mei, f. h.; wang, x. q.; shen, b.] peking univ, sch phys, state key lab artificial microstruct & mesoscop, beijing 100871, peoples r china; [chen, y. h.; yu, j. l.; ma, h.] cas, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
Subject Area半导体材料
Funding OrganizationNational Natural Science Foundation of China [60990313, 60890193, 60806042, 60736033]; Research Fund for the Doctoral Program of Higher Education in China [200800011021]; Wuhan National High Magnetic Field Center [WHMFCKF2011004]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21273
Collection中科院半导体材料科学重点实验室
Corresponding AuthorYin, CM, Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop, Beijing 100871, Peoples R China. ntang@pku.edu.cn; bshen@pku.edu.cn
Recommended Citation
GB/T 7714
Yin CM,Tang N,Zhang S,et al. Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures[J]. APPLIED PHYSICS LETTERS,2011,98(12):Article no.122104.
APA Yin CM.,Tang N.,Zhang S.,Duan JX.,Xu FJ.,...&bshen@pku.edu.cn.(2011).Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures.APPLIED PHYSICS LETTERS,98(12),Article no.122104.
MLA Yin CM,et al."Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures".APPLIED PHYSICS LETTERS 98.12(2011):Article no.122104.
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