Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design | |
Xu PF; Yang T![]() ![]() | |
2011 | |
Source Publication | CHINESE PHYSICS LETTERS
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ISSN | 0256-307X |
Volume | 28Issue:4Pages:Article no.44201 |
metadata_83 | [xu peng-fei; yang tao; ji hai-ming; gu yong-xian; wang zhan-guo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; [cao yu-lian] chinese acad sci, inst semicond, nanooptoelect lab, beijing 100083, peoples r china |
Keyword | Well Lasers Dependence Diode Gain |
Subject Area | 半导体材料 |
Funding Organization | Chinese Academy of Sciences ; National Natural Science Foundation of China [60876033, 61076050, 61021003] |
Indexed By | SCI |
Language | 英语 |
Date Available | 2011-07-05 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/21267 |
Collection | 中科院半导体材料科学重点实验室 |
Corresponding Author | Xu, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn |
Recommended Citation GB/T 7714 | Xu PF,Yang T,Ji HM,et al. Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design[J]. CHINESE PHYSICS LETTERS,2011,28(4):Article no.44201. |
APA | Xu PF.,Yang T.,Ji HM.,Cao YL.,Gu YX.,...&Xu, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn.(2011).Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design.CHINESE PHYSICS LETTERS,28(4),Article no.44201. |
MLA | Xu PF,et al."Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design".CHINESE PHYSICS LETTERS 28.4(2011):Article no.44201. |
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