Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design

	Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design
	Xu PF; Yang T; Ji HM; Cao YL; Gu YX; Wang ZG; Xu, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn
	2011
Source Publication	CHINESE PHYSICS LETTERS
ISSN	0256-307X
Volume	28 Issue:4 Pages:Article no.44201
metadata_83	[xu peng-fei; yang tao; ji hai-ming; gu yong-xian; wang zhan-guo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; [cao yu-lian] chinese acad sci, inst semicond, nanooptoelect lab, beijing 100083, peoples r china
Keyword	Well Lasers Dependence Diode Gain
Subject Area	半导体材料
Funding Organization	Chinese Academy of Sciences ; National Natural Science Foundation of China [60876033, 61076050, 61021003]
Indexed By	SCI
Language	英语
Date Available	2011-07-05
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/21267
Collection	中科院半导体材料科学重点实验室
Corresponding Author	Xu, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn
Recommended Citation GB/T 7714	Xu PF,Yang T,Ji HM,et al. Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design[J]. CHINESE PHYSICS LETTERS,2011,28(4):Article no.44201.
APA	Xu PF.,Yang T.,Ji HM.,Cao YL.,Gu YX.,...&Xu, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn.(2011).Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design.CHINESE PHYSICS LETTERS,28(4),Article no.44201.
MLA	Xu PF,et al."Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design".CHINESE PHYSICS LETTERS 28.4(2011):Article no.44201.

Files in This Item:
File Name/Size	DocType	Version	Access	License
201183.pdf（614KB）			限制开放	--	Application Full Text

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中科院半导体材料科学重点实验室知识库