SEMI OpenIR  > 中科院半导体材料科学重点实验室
Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design
Xu PF; Yang T; Ji HM; Cao YL; Gu YX; Wang ZG; Xu, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn
2011
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume28Issue:4Pages:Article no.44201
metadata_83[xu peng-fei; yang tao; ji hai-ming; gu yong-xian; wang zhan-guo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; [cao yu-lian] chinese acad sci, inst semicond, nanooptoelect lab, beijing 100083, peoples r china
KeywordWell Lasers Dependence Diode Gain
Subject Area半导体材料
Funding OrganizationChinese Academy of Sciences ; National Natural Science Foundation of China [60876033, 61076050, 61021003]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21267
Collection中科院半导体材料科学重点实验室
Corresponding AuthorXu, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn
Recommended Citation
GB/T 7714
Xu PF,Yang T,Ji HM,et al. Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design[J]. CHINESE PHYSICS LETTERS,2011,28(4):Article no.44201.
APA Xu PF.,Yang T.,Ji HM.,Cao YL.,Gu YX.,...&Xu, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn.(2011).Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design.CHINESE PHYSICS LETTERS,28(4),Article no.44201.
MLA Xu PF,et al."Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design".CHINESE PHYSICS LETTERS 28.4(2011):Article no.44201.
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