Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer | |
Gu YX; Yang T![]() | |
2011 | |
Source Publication | JOURNAL OF APPLIED PHYSICS
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ISSN | 0021-8979 |
Volume | 109Issue:6Pages:Article no.64320 |
metadata_83 | [gu, yongxian; yang, tao; ji, haiming; xu, pengfei; wang, zhanguo] chinese acad sci, inst semicond, key lab semicond mat, beijing 100083, peoples r china |
Keyword | Photoluminescence Emission Inalas |
Subject Area | 半导体材料 |
Funding Organization | Chinese Academy of Sciences ; National Science Foundation of China [60876033, 61076050, 61021003] |
Indexed By | SCI |
Language | 英语 |
Date Available | 2011-07-05 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/21265 |
Collection | 中科院半导体材料科学重点实验室 |
Corresponding Author | Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, POB 912, Beijing 100083, Peoples R China. tyang@semi.ac.cn |
Recommended Citation GB/T 7714 | Gu YX,Yang T,Ji HM,et al. Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer[J]. JOURNAL OF APPLIED PHYSICS,2011,109(6):Article no.64320. |
APA | Gu YX,Yang T,Ji HM,Xu PF,Wang ZG,&Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, POB 912, Beijing 100083, Peoples R China. tyang@semi.ac.cn.(2011).Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer.JOURNAL OF APPLIED PHYSICS,109(6),Article no.64320. |
MLA | Gu YX,et al."Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer".JOURNAL OF APPLIED PHYSICS 109.6(2011):Article no.64320. |
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