SEMI OpenIR  > 中科院半导体材料科学重点实验室
Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer
Gu YX; Yang T; Ji HM; Xu PF; Wang ZG; Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, POB 912, Beijing 100083, Peoples R China. tyang@semi.ac.cn
2011
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume109Issue:6Pages:Article no.64320
metadata_83[gu, yongxian; yang, tao; ji, haiming; xu, pengfei; wang, zhanguo] chinese acad sci, inst semicond, key lab semicond mat, beijing 100083, peoples r china
KeywordPhotoluminescence Emission Inalas
Subject Area半导体材料
Funding OrganizationChinese Academy of Sciences ; National Science Foundation of China [60876033, 61076050, 61021003]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21265
Collection中科院半导体材料科学重点实验室
Corresponding AuthorYang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, POB 912, Beijing 100083, Peoples R China. tyang@semi.ac.cn
Recommended Citation
GB/T 7714
Gu YX,Yang T,Ji HM,et al. Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer[J]. JOURNAL OF APPLIED PHYSICS,2011,109(6):Article no.64320.
APA Gu YX,Yang T,Ji HM,Xu PF,Wang ZG,&Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, POB 912, Beijing 100083, Peoples R China. tyang@semi.ac.cn.(2011).Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer.JOURNAL OF APPLIED PHYSICS,109(6),Article no.64320.
MLA Gu YX,et al."Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer".JOURNAL OF APPLIED PHYSICS 109.6(2011):Article no.64320.
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