SEMI OpenIR  > 中科院半导体材料科学重点实验室
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
Zhang BA; Song HP; Wang J; Jia CH; Liu JM; Xu XQ; Liu XL; Yang SY; Zhu QS; Wang ZG; Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn
2011
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume319Issue:1Pages:114-117
metadata_83[zhang, biao; song, huaping; wang, jun; jia, caihong; liu, jianming; xu, xiaoqing; liu, xianglin; yang, shaoyan; zhu, qinsheng; wang, zhanguo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordAnisotropy Crystal Morphology Metalorganic Chemical Vapor Deposition A-plane Inn Indium Nitride Movpe Growth Cubic Inn Sapphire Gan Mbe
Subject Area半导体材料
Funding OrganizationNational Science Foundation of China [60776015]; Special Funds for Major State Basic Research Project (973 program) of China [2006CB604907]; 863 High Technology R&D Program of China [2007AA03Z402, 2007AA03Z451]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21261
Collection中科院半导体材料科学重点实验室
Corresponding AuthorZhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn
Recommended Citation
GB/T 7714
Zhang BA,Song HP,Wang J,et al. MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers[J]. JOURNAL OF CRYSTAL GROWTH,2011,319(1):114-117.
APA Zhang BA.,Song HP.,Wang J.,Jia CH.,Liu JM.,...&Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn.(2011).MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers.JOURNAL OF CRYSTAL GROWTH,319(1),114-117.
MLA Zhang BA,et al."MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers".JOURNAL OF CRYSTAL GROWTH 319.1(2011):114-117.
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