SEMI OpenIR  > 中科院半导体材料科学重点实验室
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD
Zhang BA; Song HP; Xu XQ; Liu JM; Wang J; Liu XL; Yang SY; Zhu QS; Wang ZG; Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn; xlliu@semi.ac.cn; qszhu@semi.ac.cn
2011
Source PublicationNANOTECHNOLOGY
ISSN0957-4484
Volume22Issue:23Pages:Article no.235603
metadata_83[zhang, biao; song, huaping; xu, xiaoqing; liu, jianming; wang, jun; liu, xianglin; yang, shaoyan; zhu, qinsheng; wang, zhanguo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordChemical-vapor-deposition Semiconductor Nanowires Nitride Nanotubes Gan Emission Mechanism
Subject Area半导体材料
Funding OrganizationNational Science Foundation of China [60776015, 10979507]; Special Funds for Major State Basic Research Project (973 program) of China [2006CB604907]; 863 High Technology R&D Program of China [2007AA03Z402, 2007AA03Z451]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21259
Collection中科院半导体材料科学重点实验室
Corresponding AuthorZhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn; xlliu@semi.ac.cn; qszhu@semi.ac.cn
Recommended Citation
GB/T 7714
Zhang BA,Song HP,Xu XQ,et al. Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD[J]. NANOTECHNOLOGY,2011,22(23):Article no.235603.
APA Zhang BA.,Song HP.,Xu XQ.,Liu JM.,Wang J.,...&qszhu@semi.ac.cn.(2011).Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD.NANOTECHNOLOGY,22(23),Article no.235603.
MLA Zhang BA,et al."Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD".NANOTECHNOLOGY 22.23(2011):Article no.235603.
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