SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy
Yang XG; Yang T; Wang KF; Ji HM; Ni HQ; Niu ZC; Wang ZG; Yang, XG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. tyang@semi.ac.cn
2011
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN0268-1242
Volume26Issue:7Pages:Article no.75010
metadata_83[yang, xiaoguang; yang, tao; wang, kefan; ji, haiming; wang, zhanguo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; [ni, haiqiao; niu, zhichuan] chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
KeywordHigh-density Temperature-dependence Self-formation Layers Well Mbe
Subject Area半导体材料
Funding OrganizationChinese Academy of Sciences ; National Science Foundation of China [60876033, 61076050, 61021003]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21255
Collection中科院半导体材料科学重点实验室
Corresponding AuthorYang, XG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. tyang@semi.ac.cn
Recommended Citation
GB/T 7714
Yang XG,Yang T,Wang KF,et al. Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2011,26(7):Article no.75010.
APA Yang XG.,Yang T.,Wang KF.,Ji HM.,Ni HQ.,...&Yang, XG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. tyang@semi.ac.cn.(2011).Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,26(7),Article no.75010.
MLA Yang XG,et al."Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 26.7(2011):Article no.75010.
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