SEMI OpenIR  > 中科院半导体材料科学重点实验室
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG; Lin, ZJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn
2011
Source PublicationCHINESE PHYSICS B
ISSN1009-1963
Volume20Issue:4Pages:Article no.47105
metadata_83[lue yuan-jie; lin zhao-jun; zhang yu; meng ling-guo; cao zhi-fang; luan chong-biao] shandong univ, sch phys, jinan 250100, peoples r china; [chen hong] chinese acad sci, inst phys, beijing natl lab condensed matter phys, beijing 100190, peoples r china; [wang zhan-guo] chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
KeywordAlgan/gan Heterostructures Thermal Stressing Polarization Self-consistently Solving Schrodinger's And Poisson's Equations Field-effect Transistors Polarization Stability Charge Gan
Subject Area半导体材料
Funding OrganizationNational Natural Science Foundation of China [10774090]; National Basic Research Program of China [2007CB936602]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21251
Collection中科院半导体材料科学重点实验室
Corresponding AuthorLin, ZJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn
Recommended Citation
GB/T 7714
Lu YJ,Lin ZJ,Zhang Y,et al. Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts[J]. CHINESE PHYSICS B,2011,20(4):Article no.47105.
APA Lu YJ.,Lin ZJ.,Zhang Y.,Meng LG.,Cao ZF.,...&Lin, ZJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn.(2011).Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts.CHINESE PHYSICS B,20(4),Article no.47105.
MLA Lu YJ,et al."Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts".CHINESE PHYSICS B 20.4(2011):Article no.47105.
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