Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts | |
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG; Lin, ZJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn | |
2011 | |
Source Publication | CHINESE PHYSICS B
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ISSN | 1009-1963 |
Volume | 20Issue:4Pages:Article no.47105 |
metadata_83 | [lue yuan-jie; lin zhao-jun; zhang yu; meng ling-guo; cao zhi-fang; luan chong-biao] shandong univ, sch phys, jinan 250100, peoples r china; [chen hong] chinese acad sci, inst phys, beijing natl lab condensed matter phys, beijing 100190, peoples r china; [wang zhan-guo] chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china |
Keyword | Algan/gan Heterostructures Thermal Stressing Polarization Self-consistently Solving Schrodinger's And Poisson's Equations Field-effect Transistors Polarization Stability Charge Gan |
Subject Area | 半导体材料 |
Funding Organization | National Natural Science Foundation of China [10774090]; National Basic Research Program of China [2007CB936602] |
Indexed By | SCI |
Language | 英语 |
Date Available | 2011-07-05 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/21251 |
Collection | 中科院半导体材料科学重点实验室 |
Corresponding Author | Lin, ZJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn |
Recommended Citation GB/T 7714 | Lu YJ,Lin ZJ,Zhang Y,et al. Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts[J]. CHINESE PHYSICS B,2011,20(4):Article no.47105. |
APA | Lu YJ.,Lin ZJ.,Zhang Y.,Meng LG.,Cao ZF.,...&Lin, ZJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn.(2011).Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts.CHINESE PHYSICS B,20(4),Article no.47105. |
MLA | Lu YJ,et al."Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts".CHINESE PHYSICS B 20.4(2011):Article no.47105. |
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