SEMI OpenIR  > 中科院半导体材料科学重点实验室
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H; Lv, YJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn
2011
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume109Issue:7Pages:Article no.74512
metadata_83[lv, yuanjie; lin, zhaojun; zhao, jianzhi; cao, zhifang; meng, lingguo; luan, chongbiao] shandong univ, sch phys, jinan 250100, peoples r china; [corrigan, timothy d.] univ maryland, dept phys, college pk, md 20740 usa; [wang, zhanguo] chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; [chen, hong] chinese acad sci, inst phys, beijing natl lab condensed matter phys, beijing 100080, peoples r china
KeywordField-effect Transistors Gan Dependence Contacts States Ni
Subject Area半导体材料
Funding OrganizationNational Natural Science Foundation of China [10774090]; National Basic Research Program of China [2007CB936602]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21247
Collection中科院半导体材料科学重点实验室
Corresponding AuthorLv, YJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn
Recommended Citation
GB/T 7714
Lv YJ,Lin ZJ,Corrigan TD,et al. Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics[J]. JOURNAL OF APPLIED PHYSICS,2011,109(7):Article no.74512.
APA Lv YJ.,Lin ZJ.,Corrigan TD.,Zhao JZ.,Cao ZF.,...&Lv, YJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn.(2011).Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics.JOURNAL OF APPLIED PHYSICS,109(7),Article no.74512.
MLA Lv YJ,et al."Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics".JOURNAL OF APPLIED PHYSICS 109.7(2011):Article no.74512.
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