SEMI OpenIR  > 中科院半导体材料科学重点实验室
Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate
Kong JX; Zhu QS; Xu B; Wang ZG; Kong, JX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. jxkong@semi.ac.cn
2011
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume109Issue:8Pages:Article no.84345
metadata_83[kong, j. x.; zhu, q. s.; xu, b.; wang, z. g.] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
Subject Area半导体材料
Funding OrganizationNational Research Project of China [60990315]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21245
Collection中科院半导体材料科学重点实验室
Corresponding AuthorKong, JX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. jxkong@semi.ac.cn
Recommended Citation
GB/T 7714
Kong JX,Zhu QS,Xu B,et al. Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate[J]. JOURNAL OF APPLIED PHYSICS,2011,109(8):Article no.84345.
APA Kong JX,Zhu QS,Xu B,Wang ZG,&Kong, JX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. jxkong@semi.ac.cn.(2011).Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate.JOURNAL OF APPLIED PHYSICS,109(8),Article no.84345.
MLA Kong JX,et al."Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate".JOURNAL OF APPLIED PHYSICS 109.8(2011):Article no.84345.
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